Effects of ain buffer layer on crystallographic structure and on electrical and optical properties of GaN and Ga1−AlN (0 < x ≦ 0.4) films grown on sapphire substrate by MOVPE

Isamu Akasaki; Hiroshi Amano; Yasuo Koide; Kazumasa Hiramatsu; Nobuhiko Sawaki

doi:10.1016/0022-0248(89)90200-5

Effects of ain buffer layer on crystallographic structure and on electrical and optical properties of GaN and Ga1−AlN (0 < x ≦ 0.4) films grown on sapphire substrate by MOVPE

Authors: Isamu Akasaki, Hiroshi Amano, Yasuo Koide, Kazumasa Hiramatsu, Nobuhiko Sawaki - Journal of Crystal Growth 1989 cited by 688

Effects of ain buffer layer on crystallographic structure and on electrical and optical properties of GaN and Ga1−AlN (0 < x ≦ 0.4) films grown on sapphire substrate by MOVPE | Litlas