A Bias-Dependent Single-Event Compact Model Implemented Into BSIM4 and a 90 nm CMOS Process Design Kit

Authors: J. S. Kauppila, A. Sternberg, Michael L. Alles, A. Matt Francis, Jim Holmes, Oluwole A. Amusan, L. W. Massengill - IEEE Transactions on Nuclear Science 2009 cited by 160

A single-event model capable of capturing bias- dependent effects has been developed and integrated into the BSIM4 transistor model and a 90 nm CMOS process design kit. Simulation comparisons with mixed mode TCAD are presented.