A 144-MHz Fully Integrated Resonant Regulating Rectifier With Hybrid Pulse Modulation for mm-Sized Implants

This paper presents a fully integrated resonant regulating rectifier (IR 3 ) with an on-chip coil used to wirelessly power mm-sized implants. By combining rectification and regulation in a single stage, and controlling this stage via a hybrid pulse-width modulation and pulse-frequency modulation (PFM) feedback scheme, the IR 3 avoids efficiency-limiting cascaded losses while enabling tight voltage regulation with low dropout and ripple. The IR 3 is implemented in 0.078 mm 2 of active area in 180-nm Silicon oxide insulator (SOI) CMOS, and achieves a 1.87% AV DD /V DD power supply regulation ratio with a 1-nF decoupling capacitor despite a tenfold load current variation from 8 to 80 μA. A 0.8-V V DD is maintained at a 8-kΩ load for 144-MHz RF inputs ranging from 0.98 to 1.5 V. At 1-V regulation, the voltage conversion efficiency is greater than 92% with less than 5.2-mVpp ripple, while the power conversion efficiency is 54%. The measured overall wireless power transfer system efficiency, from the primary coil to VDD output of the IR 3 , is 2% at 160-μW load, and reaches 5% at 700 μW.

A 144-MHz Fully Integrated Resonant Regulating Rectifier With Hybrid Pulse Modulation for mm-Sized Implants | Litlas