Highly Reliable and Manufacturable MRAM embedded in 14nm FinFET node

Authors: Seung Hwan Ko, J.H. Park, J. Bąk, Hoeryong Jung, Jaehoon Shim, D. S. Kim, Woo‐Hyun Lim, D.-E. Jeong, J. H. Lee, Kyoobin Lee, Jae-Hyun Park, Y. Kim, C. Kim, J. H. Jeong, Chang Young Lee, S. H. Han, Yongsung Ji, S. H. Hwang, Hong‐Jae Shin, Keun Lee, Youjian Song, Y.G. Shin, Jeehwan Song - 2023 IEEE Symposium on VLSI Technology and Circuits (VLSI Technology and Circuits) 2023 cited by 15

We demonstrated highly reliable and manufacturable 16Mb magnetic random access memory (eMRAM) embedded in 14nm FinFET logic by achieving high yield over 90% at an operating temperature ranging from $-40^{\circ}\mathrm{C}$ to $125^{\circ}\mathrm{C}$ and passing the PKG reliability tests, such as HTOL and endurance 10 6 cycles. In addition, for automotive application and further scaling down, we confirmed the function of eMRAM macro at the elevated temperature of $160^{\circ}\mathrm{C}$, and achieved the low short fail of 1ppm level for sub 10nm eMRAM pitch using the novel patterning technology, respectively.