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James S. Speck

1993–2023 年に発表

64
論文数
22,457
被引用数
61
h 指数
62
i10 指数

被引用数

James S. Speck の年別被引用数1994 年: 被引用 2 件1996 年: 被引用 6 件1997 年: 被引用 15 件1998 年: 被引用 38 件1999 年: 被引用 21 件2000 年: 被引用 19 件2001 年: 被引用 30 件2002 年: 被引用 32 件2003 年: 被引用 27 件2004 年: 被引用 12 件2005 年: 被引用 18 件2006 年: 被引用 23 件2007 年: 被引用 31 件2008 年: 被引用 31 件2009 年: 被引用 53 件2010 年: 被引用 30 件2011 年: 被引用 17 件2012 年: 被引用 37 件2013 年: 被引用 46 件2014 年: 被引用 32 件2015 年: 被引用 32 件2016 年: 被引用 33 件2017 年: 被引用 52 件2018 年: 被引用 63 件2019 年: 被引用 57 件2020 年: 被引用 48 件2021 年: 被引用 43 件2022 年: 被引用 48 件2023 年: 被引用 25 件2024 年: 被引用 31 件2025 年: 被引用 10 件2026 年: 被引用 10 件1995 年は被引用が無いため表示していません

引用元

国・地域

この著者を引用した国・地域の世界地図アメリカ合衆国: 引用元論文 308 件、この内訳の 30.4%中国: 引用元論文 132 件、この内訳の 13%日本: 引用元論文 71 件、この内訳の 7%ドイツ: 引用元論文 59 件、この内訳の 5.8%イギリス: 引用元論文 49 件、この内訳の 4.8%韓国: 引用元論文 42 件、この内訳の 4.1%台湾: 引用元論文 41 件、この内訳の 4%フランス: 引用元論文 38 件、この内訳の 3.8%イタリア: 引用元論文 29 件、この内訳の 2.9%スイス: 引用元論文 23 件、この内訳の 2.3%インド: 引用元論文 21 件、この内訳の 2.1%オランダ: 引用元論文 19 件、この内訳の 1.9%
0%30.4%その他 17.9%

機関

分野

  • Physics and Astronomy43.7%
  • Materials Science30.1%
  • Engineering17%
  • Neuroscience2%
  • Biochemistry, Genetics and Molecular Biology1.8%
  • Agricultural and Biological Sciences1.3%
  • その他4.1%

トピック

  • GaN-based semiconductor devices and materials15.8%
  • Ga2O3 and related materials7.1%
  • ZnO doping and properties6.2%
  • Semiconductor Quantum Structures and Devices4.8%
  • Semiconductor materials and devices4.2%
  • Ferroelectric and Piezoelectric Materials3.1%
  • その他58.8%

共著者

全論文

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  1. Polarization effects, surface states, and the source of electrons in AlGaN/GaN heterostructure field effect transistors

    著者: J. P. Ibbetson, P. Fini, K. D. Ness, Steven P. DenBaars, James S. Speck, Umesh K. Mishra - Applied Physics Letters 2000 被引用: 1,097

  2. Prospects for LED lighting

    著者: Siddha Pimputkar, James S. Speck, Steven P. DenBaars, Shuji Nakamura - Nature Photonics 2009 被引用: 2,157

  3. Size-independent peak efficiency of III-nitride micro-light-emitting-diodes using chemical treatment and sidewall passivation

    著者: Matthew S. Wong, Changmin Lee, Daniel J. Myers, David Hwang, Jared A. Kearns, Thomas Li, James S. Speck, Shuji Nakamura, Steven P. DenBaars - Applied Physics Express 2019 被引用: 252

  4. β-Gallium oxide power electronics

    著者: Andrew J. Green, James S. Speck, Grace Xing, P. Moens, Fredrik Allerstam, Krister Gumaelius, Thomas Neyer, Andrea Arias-Purdue, Vivek Mehrotra, Akito Kuramata, Kohei Sasaki, Shinya Watanabe, Kimiyoshi Koshi, J. D. Blevins, Oliver Bierwagen, Sriram Krishnamoorthy, Kevin Leedy, Aaron R. Arehart, Adam T. Neal, Shin Mou, Steven A. Ringel, Avinash Kumar, Ankit Sharma, Krishnendu Ghosh, Uttam Singisetti, Wenshen Li, Kelson D. Chabak, Kyle J. Liddy, Ahmad E. Islam, Siddharth Rajan, Samuel Graham, Sukwon Choi, Zhe Cheng, Masataka Higashiwaki - APL Materials 2022 被引用: 506

  5. Recent progress in metal-organic chemical vapor deposition of left ( 000 bar 1 right ) N-polar group-III nitrides

    著者: S. Keller, Haoran Li, Matthew A. Laurent, Yan-Ling Hu, Nathan Pfaff, Jing Lu, David F. Brown, N. Fichtenbaum, James S. Speck, Steven P. DenBaars, Umesh K. Mishra - Semiconductor Science and Technology 2014 被引用: 220

  6. Direct Measurement of Auger Electrons Emitted from a Semiconductor Light-Emitting Diode under Electrical Injection: Identification of the Dominant Mechanism for Efficiency Droop

    著者: Justin Iveland, Lucio Martinelli, Jacques Peretti, James S. Speck, Claude Weisbuch - Physical Review Letters 2013 被引用: 660

  7. High-power AlGaN/GaN HEMTs for Ka-band applications

    著者: Tomás Palacios, A. Chakraborty, Siddharth Rajan, C. Poblenz, S. Keller, Steven P. DenBaars, James S. Speck, Umesh K. Mishra - IEEE Electron Device Letters 2005 被引用: 492

  8. N-polar GaN epitaxy and high electron mobility transistors

    著者: Man Hoi Wong, S. Keller, Sansaptak Dasgupta Nidhi, Daniel J. Denninghoff, Seshadri Kolluri, David F. Brown, Jing Lu, N. Fichtenbaum, Elaheh Ahmadi, Uttam Singisetti, Alessandro Chini, Siddharth Rajan, Steven P. DenBaars, James S. Speck, Umesh K. Mishra - Semiconductor Science and Technology 2013 被引用: 228

  9. Development of gallium-nitride-based light-emitting diodes (LEDs) and laser diodes for energy-efficient lighting and displays

    著者: Steven P. DenBaars, Daniel Feezell, Katheryn Kelchner, Siddha Pimputkar, Chi-Chen Pan, Chia-Chen Yen, Shinichi Tanaka, Yuji Zhao, Nathan Pfaff, Robert M. Farrell, Mike Iza, S. Keller, Umesh K. Mishra, James S. Speck, Shuji Nakamura - Acta Materialia 2013 被引用: 440

  10. Polarization-induced charge and electron mobility in AlGaN/GaN heterostructures grown by plasma-assisted molecular-beam epitaxy

    著者: I. P. Smorchkova, C. R. Elsass, J. P. Ibbetson, R. Vetury, B. Heying, P. Fini, E. Haus, Steven P. DenBaars, James S. Speck, Umesh K. Mishra - Journal of Applied Physics 1999 被引用: 435

  11. Polarization effects in AlGaN/GaN and GaN/AlGaN/GaN heterostructures

    著者: S. Heikman, S. Keller, Yuan Wu, James S. Speck, Steven P. DenBaars, Umesh K. Mishra - Journal of Applied Physics 2003 被引用: 240

  12. Role of threading dislocation structure on the x-ray diffraction peak widths in epitaxial GaN films

    著者: B. Heying, Xuemei Wu, S. Keller, Y. Li, D. Kapolnek, B.P. Keller, Steven P. DenBaars, James S. Speck - Applied Physics Letters 1996 被引用: 829

  13. Strain-induced polarization in wurtzite III-nitride semipolar layers

    著者: А. Е. Романов, Troy J. Baker, Shuji Nakamura, James S. Speck, ERATO/JST UCSB Group - Journal of Applied Physics 2006 被引用: 708

  14. Electrical characterization of GaN p-n junctions with and without threading dislocations

    著者: P. Kozodoy, J. P. Ibbetson, H. Marchand, P. Fini, S. Keller, James S. Speck, Steven P. DenBaars, Umesh K. Mishra - Applied Physics Letters 1998 被引用: 357

  15. AlN/GaN and (Al,Ga)N/AlN/GaN two-dimensional electron gas structures grown by plasma-assisted molecular-beam epitaxy

    著者: I. P. Smorchkova, L. Chen, Thomas E. Mates, L. Shen, S. Heikman, Brendan Moran, S. Keller, Steven P. DenBaars, James S. Speck, Umesh K. Mishra - Journal of Applied Physics 2001 被引用: 327

  16. Direct imaging of reverse-bias leakage through pure screw dislocations in GaN films grown by molecular beam epitaxy on GaN templates

    著者: Julia W. P. Hsu, Michael J. Manfra, R. J. Molnar, B. Heying, James S. Speck - Applied Physics Letters 2002 被引用: 300

  17. Donors and deep acceptors in β-Ga2O3

    著者: Adam T. Neal, Shin Mou, Subrina Rafique, Hongping Zhao, Elaheh Ahmadi, James S. Speck, Kevin T. Stevens, John D. Blevins, Darren B. Thomson, Neil Moser, Kelson D. Chabak, Gregg H. Jessen - Applied Physics Letters 2018 被引用: 281

  18. Comparison of size-dependent characteristics of blue and green InGaN microLEDs down to 1 μ m in diameter

    著者: Jordan M. Smith, Ryan Ley, Matthew S. Wong, Yong Hyun Baek, Ji Hun Kang, Chae Hon Kim, Michael J. Gordon, Shuji Nakamura, James S. Speck, Steven P. DenBaars - Applied Physics Letters 2020 被引用: 254

  19. High-brightness polarized light-emitting diodes

    著者: Elison Matioli, Stuart Brinkley, Kathryn M. Kelchner, Yan-Ling Hu, Shuji Nakamura, Steven P. DenBaars, James S. Speck, Claude Weisbuch - Light Science & Applications 2012 被引用: 244

  20. High luminous flux from single crystal phosphor-converted laser-based white lighting system

    著者: Michael Cantore, Nathan Pfaff, Robert M. Farrell, James S. Speck, Shuji Nakamura, Steven P. DenBaars - Optics Express 2015 被引用: 218

  21. Electrical transport, electrothermal transport, and effective electron mass in single-crystalline In2O3films

    著者: Natalie Preissler, Oliver Bierwagen, Ashok T. Ramu, James S. Speck - Physical Review B 2013 被引用: 213

  22. Origin of defect-insensitive emission probability in In-containing (Al,In,Ga)N alloy semiconductors

    著者: Shigefusa F. Chichibu, Akira Uedono, Takeyoshi Onuma, B. A. Haskell, Arpan Chakraborty, Takahiro Koyama, P. Fini, S. Keller, Steven P. DenBaars, James S. Speck, Umesh K. Mishra, Shuji Nakamura, Shigeo Yamaguchi, Satoshi Kamiyama, Hiroshi Amano, Isamu Akasaki, Jung Han, Takayuki Sota - Nature Materials 2006 被引用: 685

  23. Domain configurations due to multiple misfit relaxation mechanisms in epitaxial ferroelectric thin films. I. Theory

    著者: James S. Speck, W. Pompe - Journal of Applied Physics 1994 被引用: 507

  24. Structural characterization of nonpolar (1120) a-plane GaN thin films grown on (1102) r-plane sapphire

    著者: Michael D. Craven, Sung‐Hwan Lim, Feng Wu, James S. Speck, Steven P. DenBaars - Applied Physics Letters 2002 被引用: 487