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Peide D. Ye

2007–2025 年に発表

53
論文数
20,685
被引用数
30
h 指数
39
i10 指数

被引用数

Peide D. Ye の年別被引用数2007 年: 被引用 2 件2008 年: 被引用 6 件2009 年: 被引用 3 件2010 年: 被引用 4 件2011 年: 被引用 7 件2012 年: 被引用 17 件2013 年: 被引用 56 件2014 年: 被引用 162 件2015 年: 被引用 266 件2016 年: 被引用 193 件2017 年: 被引用 238 件2018 年: 被引用 231 件2019 年: 被引用 191 件2020 年: 被引用 164 件2021 年: 被引用 149 件2022 年: 被引用 130 件2023 年: 被引用 97 件2024 年: 被引用 109 件2025 年: 被引用 66 件2026 年: 被引用 3 件

引用元

国・地域

この著者を引用した国・地域の世界地図中国: 引用元論文 734 件、この内訳の 29.7%アメリカ合衆国: 引用元論文 542 件、この内訳の 21.9%シンガポール: 引用元論文 133 件、この内訳の 5.4%韓国: 引用元論文 129 件、この内訳の 5.2%インド: 引用元論文 87 件、この内訳の 3.5%香港: 引用元論文 77 件、この内訳の 3.1%日本: 引用元論文 71 件、この内訳の 2.9%イギリス: 引用元論文 70 件、この内訳の 2.8%オーストラリア: 引用元論文 65 件、この内訳の 2.6%ドイツ: 引用元論文 64 件、この内訳の 2.6%フランス: 引用元論文 41 件、この内訳の 1.7%イタリア: 引用元論文 33 件、この内訳の 1.4%
0%29.7%その他 17.2%

機関

分野

  • Materials Science58.9%
  • Engineering28.3%
  • Biochemistry, Genetics and Molecular Biology3.6%
  • Energy3%
  • Physics and Astronomy2.2%
  • Computer Science1.9%
  • その他2.1%

トピック

  • 2D Materials and Applications19.6%
  • MXene and MAX Phase Materials11.2%
  • Graphene research and applications8.3%
  • Advanced Memory and Neural Computing4.6%
  • Perovskite Materials and Applications4.6%
  • Ferroelectric and Negative Capacitance Devices3.3%
  • その他48.4%

共著者

全論文

検索で開く
  1. A ferroelectric semiconductor field-effect transistor

    著者: Mengwei Si, Atanu K. Saha, Shengjie Gao, Gang Qiu, Jingkai Qin, Yuqin Duan, Jie Jian, Chang Niu, Haiyan Wang, Wenzhuo Wu, Sumeet K. Gupta, Peide D. Ye - Nature Electronics 2019 被引用: 623

  2. Phosphorene: An Unexplored 2D Semiconductor with a High Hole Mobility

    著者: Han Liu, Adam T. Neal, Zhen Zhu, Zhe Luo, Xianfan Xu, David Tománek, Peide D. Ye - ACS Nano 2014 被引用: 6,443

  3. Bandgap engineering of two-dimensional semiconductor materials

    著者: Andrey Chaves, Javad G. Azadani, Hussain Alsalman, D. R. da Costa, Riccardo Frisenda, A. J. Chaves, Seung Hyun Song, Young Duck Kim, Daowei He, Jiadong Zhou, Andrés Castellanos-Gómez, F. M. Peeters, Zheng Liu, Christopher L. Hinkle, Sang‐Hyun Oh, Peide D. Ye, Steven J. Koester, Young Hee Lee, Phaedon Avouris, Xinran Wang, Tony Low - npj 2D Materials and Applications 2020 被引用: 1,250

  4. Anisotropic Signal Processing with Trigonal Selenium Nanosheet Synaptic Transistors

    著者: Jing‐Kai Qin, Feichi Zhou, Jingli Wang, Jiewei Chen, Cong Wang, Xuyun Guo, Shouxin Zhao, Yi Pei, Liang Zhen, Peide D. Ye, Shu Ping Lau, Ye Zhu, Cheng‐Yan Xu, Yang Chai - ACS Nano 2020 被引用: 79

  5. Semiconducting black phosphorus: synthesis, transport properties and electronic applications

    著者: Han Liu, Yuchen Du, Yexin Deng, Peide D. Ye - Chemical Society Reviews 2014 被引用: 1,472

  6. Field-effect transistors made from solution-grown two-dimensional tellurene

    著者: Yixiu Wang, Gang Qiu, Ruoxing Wang, Shouyuan Huang, Qingxiao Wang, Yuanyue Liu, Yuchen Du, William A. Goddard, Moon J. Kim, Xianfan Xu, Peide D. Ye, Wenzhuo Wu - Nature Electronics 2018 被引用: 903

  7. Scaled indium oxide transistors fabricated using atomic layer deposition

    著者: Mengwei Si, Zehao Lin, Zhizhong Chen, Xing Sun, Haiyan Wang, Peide D. Ye - Nature Electronics 2022 被引用: 283

  8. Steep-slope hysteresis-free negative capacitance MoS2 transistors

    著者: Mengwei Si, Chun-Jung Su, Chunsheng Jiang, Nathan J. Conrad, Hong Zhou, Kerry Maize, Gang Qiu, Chien-Ting Wu, Ali Shakouri, Muhammad A. Alam, Peide D. Ye - Nature Nanotechnology 2017 被引用: 542

  9. Controlled Growth of a Large-Size 2D Selenium Nanosheet and Its Electronic and Optoelectronic Applications

    著者: Jing‐Kai Qin, Gang Qiu, Jie Jian, Hong Zhou, Lingming Yang, Adam Charnas, Dmitry Zemlyanov, Cheng‐Yan Xu, Xianfan Xu, Wenzhuo Wu, Haiyan Wang, Peide D. Ye - ACS Nano 2017 被引用: 270

  10. Self-Assembled Au Nanoelectrodes: Enabling Low-Threshold-Voltage HfO2-Based Artificial Neurons

    著者: Hongyi Dou, Zehao Lin, Zedong Hu, Benson Kunhung Tsai, Dongqi Zheng, Jiawei Song, Juanjuan Lu, X. Zhang, Q. X. Jia, Judith L. MacManus‐Driscoll, Peide D. Ye, Haiyan Wang - Nano Letters 2023 被引用: 15

  11. Why In2O3 Can Make 0.7 nm Atomic Layer Thin Transistors

    著者: Mengwei Si, Yaoqiao Hu, Zehao Lin, Xing Sun, Adam Charnas, Dongqi Zheng, Xiao Lyu, Haiyan Wang, Kyeongjae Cho, Peide D. Ye - Nano Letters 2020 被引用: 206

  12. Channel Length Scaling of MoS2 MOSFETs

    著者: Han Liu, Adam T. Neal, Peide D. Ye - ACS Nano 2012 被引用: 807

  13. Chloride Molecular Doping Technique on 2D Materials: WS2 and MoS2

    著者: Lingming Yang, Kausik Majumdar, Han Liu, Yuchen Du, Heng Wu, Michael Hatzistergos, P. Y. Hung, Robert Tieckelmann, Wilman Tsai, Chris Hobbs, Peide D. Ye - Nano Letters 2014 被引用: 732

  14. Ferroelectric Field-Effect Transistors Based on MoS2 and CuInP2S6 Two-Dimensional van der Waals Heterostructure

    著者: Mengwei Si, Pai-Ying Liao, Gang Qiu, Yuqin Duan, Peide D. Ye - ACS Nano 2018 被引用: 365

  15. Fabrication of fully transparent nanowire transistors for transparent and flexible electronics

    著者: Sanghyun Ju, Antonio Facchetti, Yi Xuan, Jun Liu, Fumiaki N. Ishikawa, Peide D. Ye, Chongwu Zhou, Tobin J. Marks, David B. Janes - Nature Nanotechnology 2007 被引用: 543

  16. Raman response and transport properties of tellurium atomic chains encapsulated in nanotubes

    著者: Jing-Kai Qin, Pai-Ying Liao, Mengwei Si, Shiyuan Gao, Gang Qiu, Jie Jian, Qingxiao Wang, Si-Qi Zhang, Shouyuan Huang, Adam Charnas, Yixiu Wang, Moon J. Kim, Wenzhuo Wu, Xianfan Xu, Hai-Yan Wang, Li Yang, Yoke Khin Yap, Peide D. Ye - Nature Electronics 2020 被引用: 238

  17. Black Phosphorus–Monolayer MoS2 van der Waals Heterojunction p–n Diode

    著者: Yexin Deng, Zhe Luo, Nathan J. Conrad, Han Liu, Yongji Gong, Sina Najmaei, Pulickel M. Ajayan, Jun Lou, Xianfan Xu, Peide D. Ye - ACS Nano 2014 被引用: 1,226

  18. One-Dimensional van der Waals Material Tellurium: Raman Spectroscopy under Strain and Magneto-Transport

    著者: Yuchen Du, Gang Qiu, Yixiu Wang, Mengwei Si, Xianfan Xu, Wenzhuo Wu, Peide D. Ye - Nano Letters 2017 被引用: 387

  19. High-Performance Depletion/Enhancement-ode beta -Ga2O3 on Insulator (GOOI) Field-Effect Transistors With Record Drain Currents of 600/450 mA/mm

    著者: Hong Zhou, Mengwei Si, Sami Alghamdi, Gang Qiu, Lingming Yang, Peide D. Ye - IEEE Electron Device Letters 2016 被引用: 300

  20. Plasmonic Resonance Enhanced Polarization-Sensitive Photodetection by Black Phosphorus in Near Infrared

    著者: Prabhu K. Venuthurumilli, Peide D. Ye, Xianfan Xu - ACS Nano 2018 被引用: 234

  21. A critical review of recent progress on negative capacitance field-effect transistors

    著者: Muhammad A. Alam, Mengwei Si, Peide D. Ye - Applied Physics Letters 2019 被引用: 229

  22. Ultrahigh Bias Stability of ALD In2O3 FETs Enabled by High Temperature O2 Annealing

    著者: Zhuocheng Zhang, Zehao Lin, Chang Niu, Mengwei Si, Muhammad A. Alam, Peide D. Ye - IEEE Symposium on VLSI Technology and Circuits (VLSI Technology and Circuits) 2023 被引用: 29

  23. First Demonstration of BEOL-Compatible Atomic-Layer-Deposited InGaZnO TFTs with 1.5 nm Channel Thickness and 60 nm Channel Length Achieving ON/OFF Ratio Exceeding 1011, SS of 68 mV/dec, Normal-off Operation and High Positive Gate Bias Stability

    著者: Jie Zhang, Zhuocheng Zhang, Zehao Lin, Ke Xu, Hongyi Dou, Bo Yang, X. Zhang, Haiyan Wang, Peide D. Ye - IEEE Symposium on VLSI Technology and Circuits (VLSI Technology and Circuits) 2023 被引用: 29

  24. FeFET-Based Synaptic Cross-Bar Arrays for Deep Neural Networks: Impact of Ferroelectric Thickness on Device-Circuit Non-Idealities and System Accuracy

    著者: Chunguang Wang, Jeffry Victor, Atanu K. Saha, X. Chen, M. Si, T. Sharma, K. Roy, Peide D. Ye, Sumeet Kumar Gupta - Device Research Conference (DRC) 2023 被引用: 7