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Sayeef Salahuddin

2002–2024 年に発表

33
論文数
19,004
被引用数
30
h 指数
31
i10 指数

被引用数

Sayeef Salahuddin の年別被引用数1974 年: 被引用 1 件1976 年: 被引用 1 件1990 年: 被引用 1 件1997 年: 被引用 1 件2006 年: 被引用 1 件2007 年: 被引用 4 件2008 年: 被引用 2 件2009 年: 被引用 1 件2010 年: 被引用 7 件2011 年: 被引用 21 件2012 年: 被引用 55 件2013 年: 被引用 87 件2014 年: 被引用 156 件2015 年: 被引用 182 件2016 年: 被引用 233 件2017 年: 被引用 188 件2018 年: 被引用 237 件2019 年: 被引用 220 件2020 年: 被引用 206 件2021 年: 被引用 226 件2022 年: 被引用 199 件2023 年: 被引用 149 件2024 年: 被引用 130 件2025 年: 被引用 88 件2026 年: 被引用 15 件1975 年は被引用が無いため表示していません1977〜1989 年は被引用が無いため表示していません1991〜1996 年は被引用が無いため表示していません1998〜2005 年は被引用が無いため表示していません

引用元

国・地域

この著者を引用した国・地域の世界地図アメリカ合衆国: 引用元論文 869 件、この内訳の 27.5%中国: 引用元論文 628 件、この内訳の 19.9%ドイツ: 引用元論文 177 件、この内訳の 5.6%インド: 引用元論文 167 件、この内訳の 5.3%韓国: 引用元論文 145 件、この内訳の 4.6%シンガポール: 引用元論文 119 件、この内訳の 3.8%イギリス: 引用元論文 101 件、この内訳の 3.2%フランス: 引用元論文 100 件、この内訳の 3.1%日本: 引用元論文 90 件、この内訳の 2.8%スイス: 引用元論文 82 件、この内訳の 2.6%イタリア: 引用元論文 70 件、この内訳の 2.2%オーストラリア: 引用元論文 60 件、この内訳の 1.9%
0%27.5%その他 17.5%

機関

分野

  • Engineering44.1%
  • Materials Science32.1%
  • Physics and Astronomy9.4%
  • Computer Science9.2%
  • Energy1.9%
  • Biochemistry, Genetics and Molecular Biology1.8%
  • その他1.5%

トピック

  • Advanced Memory and Neural Computing11.2%
  • Ferroelectric and Negative Capacitance Devices11.2%
  • 2D Materials and Applications9.8%
  • MXene and MAX Phase Materials6.2%
  • Semiconductor materials and devices6.2%
  • Graphene research and applications5.1%
  • その他50.3%

共著者

全論文

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  1. Memory leads the way to better computing

    著者: H.‐S. Philip Wong, Sayeef Salahuddin - Nature Nanotechnology 2015 被引用: 936

  2. The era of hyper-scaling in electronics

    著者: Sayeef Salahuddin, Kai Ni, Suman Datta - Nature Electronics 2018 被引用: 701

  3. Implementing p-bits With Embedded MTJ

    著者: Kerem Y. Çamsarı, Sayeef Salahuddin, Supriyo Datta - IEEE Electron Device Letters 2017 被引用: 200

  4. Use of Negative Capacitance to Provide Voltage Amplification for Low Power Nanoscale Devices

    著者: Sayeef Salahuddin, Supriyo Datta - Nano Letters 2007 被引用: 2,130

  5. Logically synthesized and hardware-accelerated restricted Boltzmann machines for combinatorial optimization and integer factorization

    著者: Saavan Patel, Philip Canoza, Sayeef Salahuddin - Nature Electronics 2022 被引用: 46

  6. Progress, Challenges, and Opportunities in Two-Dimensional Materials Beyond Graphene

    著者: Sheneve Butler, Shawna Hollen, Linyou Cao, Yi Cui, Jay Gupta, Humberto R. Gutiérrez, Tony F. Heinz, Seung Sae Hong, Jiaxing Huang, Ariel Ismach, Ezekiel Johnston‐Halperin, Masaru Kuno, Vladimir V. Plashnitsa, Richard D. Robinson, Rodney S. Ruoff, Sayeef Salahuddin, Jie Shan, Li Shi, Michael G. Spencer, Mauricio Terrones, Wolfgang Windl, Joshua E. Goldberger - ACS Nano 2013 被引用: 4,843

  7. Enhanced ferroelectricity in ultrathin films grown directly on silicon

    著者: Suraj Cheema, Daewoong Kwon, Nirmaan Shanker, Roberto dos Reis, Shang-Lin Hsu, Jun Xiao, Haigang Zhang, Ryan Wagner, Adhiraj Datar, Margaret R. McCarter, Claudy Serrao, Ajay K. Yadav, Golnaz Karbasian, Cheng‐Hsiang Hsu, Ava J. Tan, Li‐Chen Wang, Vishal Thakare, Xiang Zhang, Apurva Mehta, Evguenia Karapetrova, Rajesh V. Chopdekar, Padraic Shafer, Elke Arenholz, Chenming Hu, Roger Proksch, R. Ramesh, Jim Ciston, Sayeef Salahuddin - Nature 2020 被引用: 908

  8. Ferroelectric HfO2 Memory Transistors With High-κ Interfacial Layer and Write Endurance Exceeding 1010 Cycles

    著者: Ava J. Tan, Yu-Hung Liao, Li‐Chen Wang, Nirmaan Shanker, Jong‐Ho Bae, Chenming Hu, Sayeef Salahuddin - IEEE Electron Device Letters 2021 被引用: 200

  9. Ultrathin ferroic HfO2–ZrO2 superlattice gate stack for advanced transistors

    著者: Suraj Cheema, Nirmaan Shanker, Li‐Chen Wang, Cheng‐Hsiang Hsu, Shang‐Lin Hsu, Yu-Hung Liao, Matthew San Jose, Jorge Gómez, Wriddhi Chakraborty, Wenshen Li, Jong‐Ho Bae, Steve Volkman, Daewoong Kwon, Yoonsoo Rho, Gianni Pinelli, Ravi Rastogi, Dominick Pipitone, Corey Stull, Matthew Cook, Brian Tyrrell, Vladimir A. Stoica, Zhan Zhang, J. W. Freeland, Christopher J. Tassone, Apurva Mehta, Ghazal Saheli, David Thompson, Dong Ik Suh, Won-Tae Koo, Kab-Jin Nam, Dong Jin Jung, Woo-Bin Song, Chung-Hsun Lin, Seung‐Geol Nam, Jinseong Heo, Narendra Parihar, Costas P. Grigoropoulos, Padraic Shafer, Patrick Fay, R. Ramesh, Souvik Mahapatra, Jim Ciston, Suman Datta, Mohamed Mokhtar Mohamed, Chenming Hu, Sayeef Salahuddin - Nature 2022 被引用: 348

  10. Negative capacitance in a ferroelectric capacitor

    著者: Asif Islam Khan, Korok Chatterjee, Brian Wang, Steven Drapcho, Long You, Claudy Rayan Serrao, Saidur Rahman Bakaul, R. Ramesh, Sayeef Salahuddin - Nature Materials 2014 被引用: 780

  11. Effects of the Variation of Ferroelectric Properties on Negative Capacitance FET Characteristics

    著者: Cheng-I Lin, Asif Islam Khan, Sayeef Salahuddin, Chenming Hu - IEEE Transactions on Electron Devices 2016 被引用: 203

  12. A Novel Neural Network-Based Transistor Compact Model Including Self-Heating

    著者: Chien-Ting Tung, Ahtisham Pampori, Chetan Kumar Dabhi, Sayeef Salahuddin, Chenming Hu - IEEE Electron Device Letters 2024 被引用: 11

  13. A SPICE-Compatible Neural Network Compact Model for Efficient IC Simulations

    著者: Chien-Ting Tung, Sayeef Salahuddin, Chenming Hu - International Conference on Simulation of Semiconductor Processes and Devices (SISPAD) 2024 被引用: 8

  14. How Good Can Monolayer MoS2 Transistors Be?

    著者: Youngki Yoon, Kartik Ganapathi, Sayeef Salahuddin - Nano Letters 2011 被引用: 1,519

  15. Proposal for an all-spin logic device with built-in memory

    著者: Behtash Behin‐Aein, Deepanjan Datta, Sayeef Salahuddin, Supriyo Datta - Nature Nanotechnology 2010 被引用: 769

  16. Deterministic switching of ferromagnetism at room temperature using an electric field

    著者: J. T. Heron, James L. Bosse, Qing He, Ya Gao, Morgan Trassin, L. Ye, James D. Clarkson, Chong Wang, Jian Liu, Sayeef Salahuddin, Daniel C. Ralph, Darrell G. Schlom, Jorge Íñiguez, Bryan D. Huey, R. Ramesh - Nature 2014 被引用: 759

  17. Room-temperature antiferromagnetic memory resistor

    著者: X. Martí, Ignasi Fina, Carlos Frontera, Jian Liu, P. Wadley, Qing He, R. J. Paull, James D. Clarkson, J. Kudrnovský, I. Turek, J. Kuneš, D. O. Yi, J.-H. Chu, Christopher T. Nelson, Long You, Elke Arenholz, Sayeef Salahuddin, J. Fontcuberta, T. Jungwirth, R. Ramesh - Nature Materials 2014 被引用: 691

  18. Spatially resolved steady-state negative capacitance

    著者: Ajay K. Yadav, Kayla X. Nguyen, Zijian Hong, Pablo García‐Fernández, Pablo Aguado‐Puente, Christopher T. Nelson, Sujit Das, Bhagwati Prasad, Daewoong Kwon, Suraj Cheema, Asif Islam Khan, Chenming Hu, Jorge Íñiguez, Javier Junquera, Long‐Qing Chen, David A. Muller, R. Ramesh, Sayeef Salahuddin - Nature 2019 被引用: 398

  19. Ferroelectric negative capacitance MOSFET: Capacitance tuning & antiferroelectric operation

    著者: Asif Islam Khan, Chun Wing Yeung, Chenming Hu, Sayeef Salahuddin - International Electron Devices Meeting 2011 被引用: 313

  20. Switching of perpendicularly polarized nanomagnets with spin orbit torque without an external magnetic field by engineering a tilted anisotropy

    著者: Long You, OukJae Lee, Debanjan Bhowmik, Dominic Labanowski, Jeongmin Hong, Jeffrey Bokor, Sayeef Salahuddin - National Academy of Sciences, Proceedings of the National Academy of Sciences 2015 被引用: 342

  21. Sub-60mV-swing negative-capacitance FinFET without hysteresis

    著者: Kai‐Shin Li, Pin-Guang Chen, Tung-Yan Lai, Chang-Hsien Lin, Cheng-Chih Cheng, Chun‐Chi Chen, Yun-Jie Wei, Yun-Fang Hou, Ming-Han Liao, M. H. Lee, Min‐Cheng Chen, Jia-Min Sheih, Wen‐Kuan Yeh, Fu-Liang Yang, Sayeef Salahuddin, Chenming Hu - IEEE International Electron Devices Meeting (IEDM) 2015 被引用: 288

  22. Sustained Sub-60 mV/decade Switching via the Negative Capacitance Effect in MoS2 Transistors

    著者: Felicia McGuire, Yuh-Chen Lin, Katherine Price, G. B. Rayner, Sourabh Khandelwal, Sayeef Salahuddin, Aaron D. Franklin - Nano Letters 2017 被引用: 286

  23. Spin Hall effect clocking of nanomagnetic logic without a magnetic field

    著者: Debanjan Bhowmik, Long You, Sayeef Salahuddin - Nature Nanotechnology 2013 被引用: 226

  24. Ultrathin compound semiconductor on insulator layers for high-performance nanoscale transistors

    著者: Hyunhyub Ko, Kuniharu Takei, Rehan Kapadia, Steven S. C. Chuang, Hui Fang, Paul W. Leu, Kartik Ganapathi, E. Plis, Ha Sul Kim, Szu‐Ying Chen, Morten Madsen, Alexandra C. Ford, Yu‐Lun Chueh, Sanjay Krishna, Sayeef Salahuddin, Ali Javey - Nature 2010 被引用: 412