Phase-transition driven memristive system

著者: T. Driscoll, H.-T. Kim, B.-G. Chae, M. Di Ventra, D. N. Basov - Applied Physics Letters 2009 被引用: 339

Memristors are passive circuit elements which behave as resistors with memory. The recent experimental realization of a memristor has triggered interest in this concept and its possible applications. Here, we demonstrate memristive response in a thin film of vanadium dioxide. This behavior is driven by the insulator-to-metal phase transition typical of this oxide. We discuss details of this form of phase-change memristance and potential applications of our device. Most importantly, our results demonstrate the potential for a realization of memristive systems based on phase-transition phenomena.