A 28nm HKMG super low power embedded NVM technology based on ferroelectric FETs

著者: Martin Trentzsch, S. Flachowsky, Ralf P. Richter, J. Paul, Benjamin Reimer, Dirk Utess, Sören Jansen, Halid Mulaosmanovic, Stefan Müller, Stefan Slesazeck, J. Ocker, Marko Noack, Johannes Müller, P. Polakowski, Jörg Schreiter, Sebastian Beyer, Thomas Mikolajick, B. Rice - 2016 IEEE International Electron Devices Meeting (IEDM) 2016 被引用: 401

We successfully implemented a one-transistor (1T) ferroelectric field effect transistor (FeFET) eNVM into a 28nm gate-first super low power (28SLP) CMOS technology platform using two additional structural masks. The electrical baseline properties remain the same for the FeFET integration and the JTAG-controlled 64 kbit memory shows clearly separated states. High temperature retention up to 250 °C is demonstrated and endurance up to 10 5 cycles was achieved. The FeFET unique properties make it the best candidate for eNVM solutions in sub-2x technologies for low-cost IoT applications.