Enhancement of Ferroelectricity in Strained BaTiO 3 Thin Films

著者: Kyoung Jin Choi, Michael D. Biegalski, Yulan Li, Alok Sharan, J. Schubert, R. Uecker, P. Reiche, Y. B. Chen, Xiaoqing Pan, Venkatraman Gopalan, Long‐Qing Chen, Darrell G. Schlom, Chang‐Beom Eom - Science 2004 被引用: 1,943

Biaxial compressive strain has been used to markedly enhance the ferroelectric properties of BaTiO3 thin films. This strain, imposed by coherent epitaxy, can result in a ferroelectric transition temperature nearly 500 degrees C higher and a remanent polarization at least 250% higher than bulk BaTiO3 single crystals. This work demonstrates a route to a lead-free ferroelectric for nonvolatile memories and electro-optic devices.