Mechanically Durable and Highly Stretchable Transistors Employing Carbon Nanotube Semiconductor and Electrodes

著者: Alex Chortos, Ghada I. Koleilat, Raphael Pfattner, Desheng Kong, Pei Lin, Roda Nur, Ting Lei, Huiliang Wang, Nan Liu, Ying‐Chih Lai, Myung‐Gil Kim, Jong Won Chung, Sangyoon Lee, Zhenan Bao - Advanced Materials 2015 被引用: 274

Mechanically durable stretchable trans­istors are fabricated using carbon nanotube electrical components and tough thermoplastic elastomers. After an initial conditioning step, the electrical characteristics remain constant with strain. The strain-dependent characteristics are similar in orthogonal stretching directions. Devices can be impacted with a hammer and punctured with a needle while remaining functional and stretchable. As a service to our authors and readers, this journal provides supporting information supplied by the authors. Such materials are peer reviewed and may be re-organized for online delivery, but are not copy-edited or typeset. Technical support issues arising from supporting information (other than missing files) should be addressed to the authors. Please note: The publisher is not responsible for the content or functionality of any supporting information supplied by the authors. Any queries (other than missing content) should be directed to the corresponding author for the article.