Phase-Change and Redox-Based Resistive Switching Memories

著者: Dirk J. Wouters, Rainer Waser, Matthias Wuttig - Proceedings of the IEEE 2015 被引用: 166

This paper addresses the two main resistive switching (RS) memory technologies: phase-change memory (PCM) and redox-based resistive random access memory (ReRAM). It will review the basic concepts, the initial promises, and current state of the art, with focus on possible scaling pathways for low-power operation and dense, true 3-D memory. Recent physical insights and new potential concepts will be discussed.